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which de nes the implanted edge of the extrinsic base implant) Additionally, the selfalignment of the emitter and the extrinsic base improves the statistical control This is important in achieving performance objectives This is distinct from the NSA transistor where the space between the extrinsic base implant and the emitter junction can be varied and is a function of NSA masking steps As a result, the RF performance and statistical control are superior in the SA HBT From an ESD perspective, the SA bipolar transistor has a xed spacing between the extrinsic base implant and the emitter n diffusion; this has both advantages and disadvantages One of the advantages of the SA transistor is low link resistance The low link resistance allows for a low resistance in a forward bias mode of operation.

In a diodic mode of operation, the p extrinsic base implant, p link resistance region and n emitter form a p /p /n diode structure Hence, using the SA transistor in a forward-bias mode of operation will allow for a graded low anode resistance Second, this is a well controlled region, hence will have good statistical control Third, this region will be scaled in future devices In a reverse breakdown mode of operation, the p /p /n region in the HBT is well controlled The disadvantage is that the failure will most likely occur at a lower BVEBO breakdown voltage as the transistor is scaled [72,73] In this SA design, the salicide can be spatially separated from the edge of the extrinsic base implant This feature allows for the salicide edge to be separated from the emitter base metallurgical junction region.

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As the current ows through the silicide, the current density increases leading to high current density The self-heating in the lm can increase leading to high temperature near the metallurgical junction The truncation of the silicide lm also allows for the re-distribution of the current into the extrinsic polysilicon base regions as it in approaches the metallurgic junction; this allows for a lower current density and lowers the self-heating in the link resistance region From an ESD perspective, the ability to move the salicide region provides the ability to move the region of peak self-heating away from the metallurgical junction Figure 620 shows HBM ESD results of a 044 mm 10 mm SA SiGe HBT device where the salicide-to-emitter space was decreased below nominal spacing while the extrinsic base implant was kept xed ( in this case, the extrinsic base implant is self-aligned to the emitter.

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(1.1)

When transforming a Weak ET we follow the same approach and then each SIA attribute type contained in a Strong ET connected to this Weak ET through an Identifying RT needs to be propagated into our new relation. This will result in the creation of new domains within this relation that act as part of the PK for the relation. In other words, we rst transform the Weak ET the same way that we would a Strong ET. Next, we simply add a new domain for each Identifying AT that is not directly contained in the Weak ET being transformed. Each of these new domains is both an FK to the relations corresponding to the Strong ET from which it came and also part of the of cial PK for the new relation corresponding to the Weak ET. As we discussed in Section 10.3.1.1, Weak ETs usually should not participate in ITs. If they do, then they should only be allowed as Super ETs, and the additional mapping techniques in the next section should be considered and applied but this scenario is not very common and not recommended.

symbols. See Using the Movie Explorer on page 40. In addition, in the Actions panel, you can view any actions assigned to a button or movie clip.

ATM reference model and user-network interface con guration. (Sources: Refs. 2, 3,

LATENT AND MANIFEST VARIABLES One major concern in psychology is to define and describe psychological constructs, or other unobservable variables, such as a person s anxiety, extroversion, intelligence, goal orientation, or coping strategies Measurements, tests, and item responses are generally used as indicators for such constructs A psychological or other construct is confirmed empirically when it is substantiated by (valid) indicators such as observations or tests In probabilistic models, psychological or other constructs are represented by latent variables A person parameter, v represents the position (ie, measure) of a person v on the latent variable (eg, the person s ability) In the case of a one-person parameter , this means that the person is also assigned one, and only one, value on the latent variable In other cases (eg, in the case of multidimensionality), a person is assigned several person parameters.

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